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PECVD Systems (PECVD, ICPECVD)

Depolab 200 (PECVD)

Cost-effectiveness

PECVD plasma enhanced chemical vapour deposition tool Depolab 200 combines parallel plate plasma source design with direct load.

Upgradeability

According to its modular design, the PECVD Depolab 200 is upgradeable with larger pumping unit, low frequency power supply, and additional gas lines.

SENTECH control software

User-friendly powerful software is included with mimic GUI, parameter window, recipe editor, data logging, user management.

Depolab 200 is the basic plasma enhanced chemical vapour deposition (PECVD) tool by SENTECH combining the advantages of a parallel plate electrode design for uniform film deposition with cost effective design of direct load. Starting with standard applications on 2” to 8” wafers and sample pieces, it can be upgraded step by step for complex processing.

Outstanding features of the PECVD Depolab 200 are the rugged design of the system, the reliability, and the flexibility of the software and hardware. Different processes have been developed on the system e. g. for high quality silicon nitride and silicon oxide layer deposition. The PECVD Depolab 200 comprises the reactor unit with gas box, control electronics, computer, backing pump, and main connection box.

Depolab 200 plasma enhanced chemical vapour deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range up to 400 °C. The PECVD Depolab 200 is especially suited for the deposition of dielectric films for etching masks, membranes, electrically isolating films, and others.

The PECVD Depolab 200 is operated by the SENTECH advanced control software using remote field bus technology and a very user-friendly general user interface.

SI 500 PPD (PECVD)

Process flexibility

The PECVD deposition tool SI 500 PPD facilitates standard processes for the chemical vapour depositionof SiO2, SiNx, SiOxNy, and a-Si in a temperature range of RT to 350 °C.

Vacuum loadlock

The SI 500 PPD features vacuum loadlock and dry pumping unit for oil-free, higher throughput, and cleanliness of chemical vapour deposition processes.

SENTECH control software

User-friendly powerful software is included with mimic GUI, parameter window, recipe editor, data logging, and user management.

The SI 500 PPD represents an advanced tool for plasma enhanced chemical vapor deposition of dielectric films, a‑Si, SiC, and other materials. It is based on planar capacitive coupled plasma source, vacuum loadlock, temperature controlled substrate electrode, optional available low frequency mixing, fully controlled oil-free vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 PPD.

A large variety of substrates from wafer up to 200 mm diameter to parts loaded on carriers can be processes in the SI 500 PPD plasma deposition tool. The single wafer vacuum loadlock guarantees stable process conditions and allows easy switching of processes.

The SI 500 PPD plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to 350 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The SI 500 PPD is suited for the chemical vapour deposition of dielectric films and amorphous silicon for etch masks, membranes, passivation films, waveguides, and others.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 PPD chemical vapour deposition system is available as process module on cluster configuration as well.

SI 500 D ICPECVD

Exceptional high density plasma

The SI 500 D features exceptional plasma properties like high density, low ion energy, and low pressure plasma deposition of dielectric films.

Planar ICP plasma source

SENTECH proprietary Planar Triple Spiral Antenna (PTSA) ICP plasma source allows for high efficient low power coupling.

Outstanding properties of deposited layers

Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.

Dynamic temperature control

The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent stable process conditions over a wide temperature range from room temperature up to +350 °C.

The SI 500 D plasma deposition tool represents the leading edge for plasma enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. It is based on PTSA plasma source, separated gas inlets for reaction gasses, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECHcontrol software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 D.

A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 D plasma deposition system. The single wafer vacuum loadlock guarantees stable process conditions and allows for easy switching between processes.

The SI 500 D plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to 350 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The SI 500 D is especially suited for the deposition of high efficient protection barriers on organic materials at low temperatures and damage free deposition of passivating films at well defined temperatures.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 D is available as process module on cluster configuration as well.