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Plasma etching (RIE, RIE-ICP, DRIE)

Etchlab 200 (RIE), Etchlab 380 Multiwafer

Cost-effectiveness

RIE plasma etcher Etchlab 200 combines parallel plate plasma source design with direct load.

Upgradeability

According to its modular design, the plasma etcher Etchlab 200 is upgradeable with larger pumping unit, vacuum loadlock, and additional gas lines.

SENTECH control software

This plasma etcher is equipped with a user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, user management. 

The Etchlab 200 RIE plasma etcher represents a family of direct loadplasma etcher combining the advantages of a parallel plate electrode design for RIE with the cost effective design of direct load. The Etchlab 200 features simple and fast sample loading from parts to 200 mm or 300 mm diameter wafer directly onto the electrode or on carrier. Flexibility, modularity, and a small footprint are design characteristics of the Etchlab 200. Large diagnostic windows located at the top electrode and the reactor can easily accommodate the SENTECH laser interferometer or OES and RGA  systems. Ellipsometer ports are available for process monitoring using SENTECH insitu ellipsometers.

The Etchlab 200 plasma etcher can be configured for processing of materials that are compatible with wafer direct loading, including but not limited to silicon and silicon compounds, compound semiconductors, dielectrics, and metals.

The Etchlab 200 is operated by the advanced SENTECH control software using remote field bus technology and a very user-friendly general user interface.

SI 591 Compact (RIE)

Process flexibility

The RIE etcher SI 591 compact facilitates a large number of chlorine and fluorine based plasma etching processes.

Small footprint and high modularity

SI 591 compact can be configured as single reactor or as cluster tool with cassette-to-cassette loading.

SENTECH control software

Our plasma etching tools include user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, and user management.

The SI 591 compact stands for excellent process reproducibility and plasma etching process flexibility due to the vacuum loadlock and fully computer controlled plasma etching process conditions. Flexibility, modularity, and a small footprint are design characteristics of the SI 591 compact. Samples up to 200 mm diameter and carrier can be loaded. The SI 591 compact can be configured for through the wall operation or minimal footprint with multiple options.

Large diagnostic windows located at top electrode and reactor can easily accommodate the SENTECH laser interferometer or OES and RGA systems. Ellipsometer ports are available for process monitoring using SENTECH insitu ellipsometers.

The SI 591 compact combines the advantages of a parallel plate electrode design for RIE with the fully computer controlled etch process conditions of the loadlock system. The SI 591 compact can be configured for processing of a variety of materials. At SENTECH we offer different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 591 compact is available as process module on cluster configuration as well.

SI 500 ICP-RIE

Low damage etching

Due to low ion energy and narrow ion energy distribution, low damage etching andnano structuring can be performed with our icpplasma etching tools.

Simple high rate etching

High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenicprocesses for smooth side walls.

Inhouse ICP plasma source

The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems. The PTSA source generates homogeneous plasma with high ion density and low ion energy. It features high coupling efficiency and very good ignition behavior for processing of a large variety of materials and structures.

Dynamic temperature control

Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching. The ICP substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from -150 °C up to +400 °C.

The SI 500 represents the leading edge for inductive coupled plasma (ICP) processing in research and production. It is based on the ICP plasma source PTSA, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user-friendly general user interface for operating the SI 500. Flexibility and modularity are design characteristics of the SI 500.

A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 ICP plasma etching system. The single wafer vacuum loadlock guarantees stable process conditions and allows easy switch of processes.

The SI 500 ICP plasma etching tool can be configured for processing of a variety of materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 500 ICP for plasma etching is available as process module on cluster configuration as well.