DWL 66+ laser lithography system from Heidelberg Instruments Mikrotechnik GmbH.
The DWL 66+ laser lithography system is an economical, high-resolution pattern generator for direct writing. The system features powerful options such as front- and backside alignment and a choice of 405 nm or 375 nm laser wavelength. Further advanced options include an absolute position calibration and an automatic loading system. A total of six different Write Modes are available, amongst them the High-Resolution Mode with a resolution of 300 nm. Notably, the DWL 66+ presents the ultimate performance in Grayscale exposure mode, from Standard to Professional levels: This versatile technique for the creation of complex 2.5D microstructures in thick layers of low-contrast positive photoresists is used for applications such as micro-lenses, DOEs, holograms (CGHs), and textured surfaces.
This highly flexible and customizable system can be specifically tailored to your application – the sophisticated capabilities of the DWL 66+ make it the essential lithography research tool in Life Science, Advanced Packaging, MEMS, Micro-Optics, Semiconductor and all other applications that require microstructures.
| Write Mode | HiRes | I | II | III | IV | V |
| Address grid [nm] | 5 | 10 | 25 | 50 | 100 | 200 |
| Minimum structure size [μm] | 0,3 | 0,6 | 0,8 | 1,0 | 2,0 | 4,0 |
|
Minimum lines and spaces [half pitch, μm] |
0,5 | 0,8 | 1,0 | 1,5 | 3,0 | 5,0 |
| Max. write speed 405 nm laser [mm2/min] | 3 | 13 | 40 | 150 | 600 | 2000 |
| Max. write speed 375 nm laser [mm2/min] | 2 | 10 | 30 | 110 | - | - |
| Edge roughness [3σσ, nm] | 50 | 50 | 70 | 80 | 110 | 160 |
| CD uniformity [3σσ, nm] | 60 | 70 | 80 | 130 | 180 | 250 |
| Alignment measurement accuracy [3σσ, nm] | 100 | 100 | 150 | 250 | 400 | 800 |
|
2nd layer alignment over 100 x 100 mm2 [3σσ, nm] |
500 | 500 | 500 | 500 | 800 | 1000 |
|
High-Accuracy Coordinate System |
350 | 350 | 350 | 350 | 500 | 800 |
| Maximum exposure area | 200 х 200 | |||||