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DWL 66+ laser lithography system

DWL 66+ laser lithography system from Heidelberg Instruments Mikrotechnik GmbH.

The DWL 66+ laser lithography system is an economical, high-resolution pattern generator for direct writing. The system features powerful options such as front- and backside alignment and a choice of 405 nm or 375 nm laser wavelength. Further advanced options include an absolute position calibration and an automatic loading system. A total of six different Write Modes are available, amongst them the High-Resolution Mode with a resolution of 300 nm. Notably, the DWL 66+ presents the ultimate performance in Grayscale exposure mode, from Standard to Professional levels: This versatile technique for the creation of complex 2.5D microstructures in thick layers of low-contrast positive photoresists is used for applications such as micro-lenses, DOEs, holograms (CGHs), and textured surfaces.

This highly flexible and customizable system can be specifically tailored to your application – the sophisticated capabilities of the DWL 66+ make it the essential lithography research tool in Life Science, Advanced Packaging, MEMS, Micro-Optics, Semiconductor and all other applications that require microstructures.

KEY FEATURES

  • Maximum exposure area: 200 x 200 mm²
  • Maximum substrate size: 9" x 9"
  • Multiple Write Modes
  • Minimum feature size: down to 300 nm
  • Maximum write speed (at 4 µm feature size): 2000 mm²/min
  • Address grid down to 5 nm
  • Grayscale exposure mode with up to 1000 gray levels
  • Vector and Raster scan exposure mode
  • Multiple data input formats
  • Front- and backside alignment
  • Climate chamber
  • Two choices of laser wavelength (405 nm or 375 nm)
  • Real-time autofocus system
  • Scripting capability
  • Integrated camera system for measurement and inspection
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Parameters

Write Mode HiRes I II III IV V
Address grid [nm] 5 10 25 50 100 200
Minimum structure size [μm] 0,3 0,6 0,8 1,0 2,0 4,0

Minimum lines and spaces [half pitch, μm]

0,5 0,8 1,0 1,5 3,0 5,0
Max. write speed 405 nm laser [mm2/min] 3 13 40 150 600 2000
Max. write speed 375 nm laser [mm2/min] 2 10 30 110 - -
Edge roughness [3σσ, nm] 50 50 70 80 110 160
CD uniformity [3σσ, nm] 60 70 80 130 180 250
Alignment measurement accuracy [3σσ, nm] 100 100 150 250 400 800

2nd layer alignment over 100 x 100 mm2 [3σσ, nm]

500 500 500 500 800 1000

High-Accuracy Coordinate System
Includes golden plate calibration and climate monitoring: 2nd layer alignment down to 350 nm

350 350 350 350 500 800
Maximum exposure area 200 х 200 


Request by email: info@minateh.ru