Plasma Etching (RIE, RIE-ICP, DRIE)

Cryogenic ICP-RIE plasma etcher SI 500 from SENTECH Instruments GmbH.

The high end plasma etching system SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. Repeatable and stable plasma etching conditions are ensured by dynamic temperature control over a wide temperature range. Cryogenic and room temperature, gas chopping processes are applied for deep reactive plasma etching (Si, III-V semiconductors, MEMS)

Wafers up to 200 mm or up to 300 mm
Processes: ICP-RIE, RIE
Cryogeniс electrode 
Inductive Couples Plasma source (ICP)
High Plasma Density
He back side cooling 
Vacuum load lock
Up to 16 gas lines
Flourine and Chlourine gases
SENTECH Software
OES and laser Interferometry for process control
Cluster configuration
SECS-GEM protocol for production

ICP-RIE plasma etcher SI 500 from SENTECH Instruments GmbH.

The high end plasma etching system SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. Repeatable and stable plasma etching conditions are ensured by dynamic temperature control over a wide temperature range. Cryogenic and room temperature, gas chopping processes are applied for deep reactive plasma etching (Si, III-V semiconductors, MEMS)

Wafers up to 200 mm or up to 300 mm
Processes: ICP-RIE, RIE
Inductive Couples Plasma source (ICP)
High Plsam Density
He back side cooling 
Vacuum load lock
Up to 16 gas lines
Flourine and Chlourine gases
SENTECH Software
OES and laser Interferometry for process control
Cluster configuration
SECS-GEM protocol for production

SI 591 Compact and SI 591 RIE plasma etcher from SENTECH Instruments GmbH (Германия) with vacuum load-lock.

With the SI 591 compact, a variety of chlorine and fluorine based plasma etching processes can be performed reproducibly with a vacuum load lock and fully computer controlled processing. The SI 591 compact is characterized by a small footprint and flexible design for RIE plasma etching, e.g. the SI 591 compact can be integrated into a cluster system.

Wafers up to 200 мм
Process: RIE
Vacuum load-lock
up to 16 fas lines
Flourine and Chlourine  gases
SENTECH Software
OES and Lase interferometry for End point monitor
Cluster configuration

The plasma etching system EtchLab 200 features the benefits of cost effective direct loading for RIE.

The EtchLab 200 allows easy and quick sample loading for batch processing on carriers or direct loading onto the electrode. Small footprint, modularity and flexibility are design features of RIE plasma etching system

Wafers up to 200 mm and 380 mm accordingly.
Process: RIE
Open Lid systems
up to 8 gas lines
SENTECH Software
OES and Laser interferometry option for End point monitor
Compact design.