Cryogenic ICP-RIE plasma etcher SI 500C

ICP-RIE plasma etcher SI 500 from SENTECH Instruments GmbH.

The high end plasma etching system SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. Repeatable and stable plasma etching conditions are ensured by dynamic temperature control over a wide temperature range. Cryogenic and room temperature, gas chopping processes are applied for deep reactive plasma etching (Si, III-V semiconductors, MEMS)

Low damage etching

Due to low ion energy and narrow ion energy distribution, low damage etching and nano structuring can be performed with our icp plasma etching tools.

Simple high rate etching

High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.

Inhouse ICP plasma source

The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems. The PTSA source generates homogeneous plasma with high ion density and low ion energy. It features high coupling efficiency and very good ignition behavior for processing of a large variety of materials and structures.

Dynamic temperature control

Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching. The ICP substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from -150 °C up to +400 °C.

The SI 500 represents the leading edge for inductive coupled plasma (ICP) processing in research and production. It is based on the ICP plasma source PTSA, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user-friendly general user interface for operating the SI 500. Flexibility and modularity are design characteristics of the SI 500.

A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 ICP plasma etching system. The single wafer vacuum load lock guarantees stable process conditions and allows easy switch of processes.

The SI 500 ICP plasma etching tool can be configured for processing of a variety of materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 500 ICP for plasma etching is available as process module on cluster configuration as well.

Product Data

Wafers up to 200 mm or up to 300 mm
Processes: ICP-RIE, RIE
Cryogeniс electrode
Inductive Couples Plasma source (ICP)
High Plasma Density
He back side cooling
Vacuum load lock
Up to 16 gas lines
Flourine and Chlourine gases
SENTECH Software
OES and laser Interferometry for process control
Cluster configuration
SECS-GEM protocol for production
Cryogenic ICP plasma etching system
With transfer chamber and vacuum load lock
Substrate temperature from -150 °C to 80 °C (LN2 cooling)
Substrate temperature -10°C to 150°C Bosch process with circulation chiller (optional)
Automatic switching unit for comfortable change between cryogenic etching and Bosch-process

Request be email: info@minateh.ru

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