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LPCVD for Graphene and CNT growth

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LPCVD for Graphene and CNT growth from Angstom Engineering

LOW PRESSURE CHEMICAL VAPOR DEPOSITION SYSTEM

Designed and manufactured to meet the high temperature and rapid cooling requirements of graphene and CNT research, Angstrom’s LPCVD (Low Pressure Chemical Vapor Deposition) system will fit in nicely in your lab.

We engineered a water-cooled furnace that can reach 1100°C in 10 minutes, as well as cool down below 800°C in a mere 2 minutes. Controlled graphene growth is ensured, and processing times are kept to a minimum with the Low Pressure Chemical Vapor Deposition system. Various chamber tube sizes are available between Ø 2 in and Ø 8 in allowing processing of single small samples up to batches in 6-inch wafers.


REACTOR

  • Ø 50 mm-Ø 200 mm quartz tube chamber
  • Interchangeable Quartz tubes of various sizes as required
  • Accommodates Individual or multiple substrates up to 150 mm x 150 mm
  • Upstream end flange with quick connections to gas manifold
  • Downstream end flange with quick connections to pumping and gauging


TEMPERATURE/PRESSURE CONTROL

  •  The Low Pressure Chemical Vapor Deposition system features a single zone quartz lamp furnace with 6-inch uniform temperature zone
  • Auto-tuning feature provides very stable temperature control
  • Rapid heating to 1100°C in 10 minutes
  • Rapid cooling from 1100°C to 800°C in 2 minutes
  • Downstream pressure control 100mTorr to 500Torr using a throttling VAT butterfly valve
  • Up to 12 mass flow controllers


OPERATION AND SAFETY

  • Safety circuit (hardware and software)
  • Flammable gas sensor (H2)
  • Enclosed frame and safety guarding
  • PC / PLC controller including Windows based recipe and control software
  • Editable recipes, data logging, and password-protected access control

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LPCVD for Graphene and CNT growth

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