LPCVD for Graphene and CNT growth

REACTOR

• Ø 50 mm-Ø 200 mm quartz tube chamber
• Interchangeable Quartz tubes of various sizes as required
• Accommodates Individual or multiple substrates up to 150 mm x 150 mm
• Upstream end flange with quick connections to gas manifold
• Downstream end flange with quick connections to pumping and gauging

TEMPERATURE/PRESSURE CONTROL

•  The Low Pressure Chemical Vapor Deposition system features a single zone quartz lamp furnace with 6-inch uniform temperature zone
• Auto-tuning feature provides very stable temperature control
• Rapid heating to 1100°C in 10 minutes
• Rapid cooling from 1100°C to 800°C in 2 minutes
• Downstream pressure control 100mTorr to 500Torr using a throttling VAT butterfly valve
• Up to 12 mass flow controllers

OPERATION AND SAFETY

• Safety circuit (hardware and software)
• Flammable gas sensor (H2)
• Enclosed frame and safety guarding
• PC / PLC controller including Windows based recipe and control software
• Editable recipes, data logging, and password-protected access control

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Annealsys designs and manufactures Rapid Thermal Processing / Rapid Thermal Annealing (RTP / RTA) and Chemical Vapor Deposition (DLI-CVD, DLI-ALD, MOCVD, RTCVD and Spray CVD) systems for research laboratories and companies for semiconductor, MEMS, nanotechnologies and photovoltaic applications.
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Annealsys designs and manufactures Rapid Thermal Processing / Rapid Thermal Annealing (RTP / RTA) and Chemical Vapor Deposition (DLI-CVD, DLI-ALD, MOCVD, RTCVD and Spray CVD) systems for research laboratories and companies for semiconductor, MEMS, nanotechnologies and photovoltaic applications.
The versatile RTP systems offer solutions for annealing, CVD of graphene and selenization for CIGS solar cells.
 
Annealsys provides high reliability and high quality tools and offers worldwide support and service excellence.

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