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Plasma Deposition PECVD, ICPECVD

SI 500 D (ICPECVD) plasma deposition systems

SI 500 D from SENTECH Instruments GmbH - ICPECVD low temperature deposition system with vacuum load-lock.

The high end ICPECVD system SI 500 D provides exceptional performance for plasma based deposition processes. High quality dielectric and Si films are deposited using high density PECVD generated with the PTSA ICP plasma source. The planar triple spiral antenna (PTSA) ensures excellent properties of the deposited films, such as low etching rates, low stress and low interface state density at very low deposition temperatures (≤ 100 °C).

  • ICPECVD plasma deposition tool
  • With vacuum load lock
  • Up to 200 mm wafers
  • Substrate temperature from RT to 350 °C
  • Laser end point detection, OES, in-situ ellipsometer
  • Optional substrate bias
  • TEOS

SI 500 D from SENTECH Instruments GmbH - ICPECVD low temperature deposition system with vacuum load-lock.

The high end ICPECVD system SI 500 D provides exceptional performance for plasma based deposition processes. High quality dielectric and Si films are deposited using high density PECVD generated with the PTSA ICP plasma source. The planar triple spiral antenna (PTSA) ensures excellent properties of the deposited films, such as low etching rates, low stress and low interface state density at very low deposition temperatures (≤ 100 °C).

  • ICPECVD plasma deposition tool
  • With vacuum load lock
  • Up to 200 mm wafers
  • Substrate temperature from RT to 350 °C
  • Laser end point detection, OES, in-situ ellipsometer
  • Optional substrate bias
  • TEOS

SI 500 PPD (PECVD) with load lock

SI 500 PPD form SENTECH Instruments GmbH - PECVD system woth vacuum load-lock.

The flexible PECVD system SI 500 PPD features a variety of standard plasma deposition processes. SiO2, SiNx, SiOxNy, and a-Si are deposited with capacitively coupled plasma. The flexible design allows to use gaseous or liquid precursors for PECVD like TEOS

Wafer up to  200 mm.
Vacuum load lock
Process: PECVD
Up to 8 gas limes
SENTECH Software
OES, laser interferometry, in-situ laser ellipsometer for process control
TEOS source

SI 500 PPD form SENTECH Instruments GmbH - PECVD system woth vacuum load-lock.

The flexible PECVD system SI 500 PPD features a variety of standard plasma deposition processes. SiO2, SiNx, SiOxNy, and a-Si are deposited with capacitively coupled plasma. The flexible design allows to use gaseous or liquid precursors for PECVD like TEOS

Wafer up to  200 mm.
Vacuum load lock
Process: PECVD
Up to 8 gas limes
SENTECH Software
OES, laser interferometry, in-situ laser ellipsometer for process control
TEOS source

Depolab 200 (PECVD) plasma deposition systems

Depolab 200 from SENTECH Instruments GmbH - PECVD open lid plasma deposition systems.

The PECVD system Depolab 200 combines cost effective direct loading and parallel plate plasma source in a basic, compact design. The easy to use direct loading system enables user-friendly batch processing (with carrier or direct loading onto the substrate electrode). The clever PECVD system can be upgraded for enhanced performance on demand.

  • Up to 200 mm wafers.
  • Process: PECVD
  • up to 8 gas lines
  • SENTECH Software
  • OES for chamber conditionning

Depolab 200 from SENTECH Instruments GmbH - PECVD open lid plasma deposition systems.

The PECVD system Depolab 200 combines cost effective direct loading and parallel plate plasma source in a basic, compact design. The easy to use direct loading system enables user-friendly batch processing (with carrier or direct loading onto the substrate electrode). The clever PECVD system can be upgraded for enhanced performance on demand.

  • Up to 200 mm wafers.
  • Process: PECVD
  • up to 8 gas lines
  • SENTECH Software
  • OES for chamber conditionning