SI 500 PPD form SENTECH Instruments GmbH - PECVD system woth vacuum load-lock.
The flexible PECVD system SI 500 PPD features a variety of standard plasma deposition processes. SiO2, SiNx, SiOxNy, and a-Si are deposited with capacitively coupled plasma. The flexible design allows to use gaseous or liquid precursors for PECVD like TEOS.
The PECVD deposition tool SI 500 PPD facilitates standard processes for the chemical vapour deposition of SiO2, SiNx, SiOxNy, and a-Si in a temperature range of RT to
The SI 500 PPD features vacuum load lock and dry pumping unit for oil-free, higher throughput, and cleanliness of chemical vapour deposition processes.
User-friendly powerful software is included with mimic GUI, parameter window, recipe editor, data logging, and user management.
The SI 500 PPD represents an advanced tool for plasma enhanced chemical vapor deposition of dielectric films, a‑Si, SiC, and other materials. It is based on planar capacitive coupled plasma source, vacuum load lock, temperature controlled substrate electrode, optional available low frequency mixing, fully controlled oil-free vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 PPD.
A large variety of substrates from wafer up to
The SI 500 PPD plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to
SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 PPD chemical vapour deposition system is available as process module on cluster configuration as well.
Request by email: info@minateh.ru