3-inch RTP system for laboratories.
Dual chamber version for cross contamination issues
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 3-inch diameter
Temperature max: 1250°C
Temperature ramp rate: 250°C/s on 2-inch silicon wafer
Temperature control: thermocouple (pyrometer option), fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 4 gas lines with MFC and one purge line with needle valve
Loading. : manual, optional interface for glove-box
Number of process tubes: 1 or 2
3-inch RTP system for laboratories.
Dual chamber version for cross contamination issues
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 3-inch diameter
Temperature max: 1250°C
Temperature ramp rate: 250°C/s on 2-inch silicon wafer
Temperature control: thermocouple (pyrometer option), fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 4 gas lines with MFC and one purge line with needle valve
Loading. : manual, optional interface for glove-box
Number of process tubes: 1 or 2
Rapid Thermal Processing cold wall chamber furnaces
4-inch (100 mm) and 6-inch (150 mm) versions
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 4-inch, 6-inch diameter samples depending on model
Temperature max.: 1450°C (depending on furnace version)
Temperature ramp rate: 200°C/s on 4-inch silicon wafer, (depending on version)
150°C/s on 6-inch silicon wafer, (depending on version)
Temperature control: thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 5 gas lines with MFC and one purge line with needle valve
Loading: manual
Rapid Thermal Processing cold wall chamber furnaces
4-inch (100 mm) and 6-inch (150 mm) versions
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 4-inch, 6-inch diameter samples depending on model
Temperature max.: 1450°C (depending on furnace version)
Temperature ramp rate: 200°C/s on 4-inch silicon wafer, (depending on version)
150°C/s on 6-inch silicon wafer, (depending on version)
Temperature control: thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 5 gas lines with MFC and one purge line with needle valve
Loading: manual
200mm Versatile RTP system
RTCVD capability (option)
From RT to 1500°C down to 10E-6 Torr.
Applications: RTA, RTO, RTCVD, Reflow, Implantation annealing…
Substrate size: up to 8-inch diameter
Temperature max.: 1450°C (depending on version)
Temperature ramp rate: 200°C/s on 8-inch silicon wafer (depending on version)
Temperature control: multi-zone, thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 6 gas lines with MFC and one purge line with needle valve
Loading: manual, optional cassette to cassette
200mm Versatile RTP system
RTCVD capability (option)
From RT to 1500°C down to 10E-6 Torr.
Applications: RTA, RTO, RTCVD, Reflow, Implantation annealing…
Substrate size: up to 8-inch diameter
Temperature max.: 1450°C (depending on version)
Temperature ramp rate: 200°C/s on 8-inch silicon wafer (depending on version)
Temperature control: multi-zone, thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 6 gas lines with MFC and one purge line with needle valve
Loading: manual, optional cassette to cassette
RTP system with square chamber
For substrates up to 200 mm x 200 mm
Multiple system configurations
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 200x200 mm² samples
Temperature max: 1300°C (depending on furnace version)
Temperature ramp rate: 150°C/s on 4-inch silicon wafer (depending on version)
Temperature control: thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 6 gas lines with MFC and one purge line with needle valve
Loading: manual, optional cassette to cassette
RTP system with square chamber
For substrates up to 200 mm x 200 mm
Multiple system configurations
Applications: RTA, RTO, Reflow, Implantation annealing…
Substrate size: up to 200x200 mm² samples
Temperature max: 1300°C (depending on furnace version)
Temperature ramp rate: 150°C/s on 4-inch silicon wafer (depending on version)
Temperature control: thermocouple or pyrometer, fast PID
Vacuum capability: 10-3 Torr (10-6 Torr option)
Gas lines: up to 6 gas lines with MFC and one purge line with needle valve
Loading: manual, optional cassette to cassette
High Temperature RTP-CVD furnace up to 2000°C.
Applications: Silicon Carbide implantation annealing, Graphene on SiC…
Substrate size: up to 4-inch diameter samples
Temperature max.: 2000°C
Temperature ramp rate: 1°C/s on 4-inch graphite susceptor
Temperature control: thermocouple and pyrometer, fast PID
Vacuum capability: 10-6 Torr
Gas lines: up to 8 gas lines with MFC and one purge line with needle valve
Loading : manual
High Temperature RTP-CVD furnace up to 2000°C.
Applications: Silicon Carbide implantation annealing, Graphene on SiC…
Substrate size: up to 4-inch diameter samples
Temperature max.: 2000°C
Temperature ramp rate: 1°C/s on 4-inch graphite susceptor
Temperature control: thermocouple and pyrometer, fast PID
Vacuum capability: 10-6 Torr
Gas lines: up to 8 gas lines with MFC and one purge line with needle valve
Loading : manual
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