High Temperature RTP-CVD furnace up to 2000°C.
Applications
• Silicon Carbide implantation annealing
• Graphene by high temperature SiC sublimation
• CVD of graphene
Specifications
The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages: low memory effect, higher cooling rates.
The high temperature tungsten heaters provide fast heating rates and enhanced temperature uniformity.
Pyrometer and thermocouple temperature measurement are standard features. Thermocouple is used for calibration and pyrometer for process temperature control with the fast digital PID temperature controller.
The design of the process chamber provides easy loading and unloading of the substrates and easy installation of the thermocouple for calibration.
An industrial PLC guarantees a reliable control of the furnace while a PC provides an easy programming and monitoring machine.
Performance & characteristics
Up to 2000°C
High vacuum
Vacuum, neutral gas and reducing process atmosphere
