Rapid Thermal Processing cold wall chamber furnaces
4-inch (100 mm) and 6-inch (150 mm) versions
Applications
- RTA (Rapid Thermal Annealing)
- RTO (Rapid thermal oxidation)
- Diffusion, contact annealing
- Compound semiconductor annealing
- Nitridation, Silicidation
- Selenization, Sulfurization
- CVD of Graphene, Carbon nanotubes
- Crystallization and Densification
Specifications
- 4-inch and 6-inch wafer capability
- Floor standing system for reduced footprint
- High reliability and low cost of ownership
- Stainless steel cold wall chamber technology:
- High process reproducibility
- Ultra clean and contamination-free environment.
- High cooling rates and low memory effect
- A high vacuum version (10-6 mbar) is available
- Pyrometer and thermocouple control
- Fast digital PID temperature controller
- Edge pyrometer viewport insures enhanced temperature control of the susceptor for compound
semiconductors and small samples.
Performance & characteristics
- Temperature range: RT to 1450°C
- Ramp rate up to 200°C/s
- Cooling rate up to 100°C/s with special equipment
- Gas mixing capability with mass flow controllers
- Vacuum range: Atmosphere to 10-6 Torr
