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Maskless Aligner MLA150

Maskless Aligner MLA150 производства Heidelberg Instruments Mikrotechnik GmbH.

Non-contact exposure, outstanding ease of use, and high speed make the Maskless Aligner MLA150 the ideal tool in rapid prototyping environments, for low- to mid-volume production, and in Research & Development. Our once revolutionary, now state-of-the-art maskless technology has become firmly established since our Maskless Aligner series was first introduced in 2015. The MLA150 now presents the modern-day alternative to the traditional Mask Aligner.

Maskless photolithography eliminates the need for a photomask: The system exposes the pattern directly onto the resist-covered surface. Should design modifications be required, these can be quickly implemented by changing the CAD layout, resulting in much-reduced cycle-times. You will also benefit from a fast, automated front- and backside alignment procedure as well as the outstanding speed: Exposing an area of 100 x 100 mm² with structures as small as 1 micron will take less than 10 minutes. The application areas of the MLA150 include life sciences, MEMS, micro-optics, semiconductors, sensors, actuators, MOEMS, material research, nano-tubes, and graphene.

Key Features MLA150

  • Minimum substrate size: 3 mm x 3 mm
  • Maximum exposure area: 6” x 6” (optional 8”x 8”)
  • Minimum structure size down to 0.6 μm
  • Maximum write speed: 1400 mm2/min at 1 μm feature size
  • Real-time autofocus
  • Overview camera for fast alignment and inspection
  • Front- and backside alignment
  • Temperature-controlled environmental chamber
  • Exposure wavelengths: 405 nm and / or 375 nm
  • Draw Mode for CAD-less exposure
  • Standard Grayscale Exposure Mode
  • High-Aspect Ratio Mode
  • Easy-to-use operating software
Download MLA150 - PDF

Perameters of MLA150

Writing Mode WM I WM II 
Minimum structure size [μm] 0,6  1,0
Line width variation, (3σ, нм) 100 120
Global 2nd layer alignment [3σ, nm] 500 500
Local 2nd layer alignment [3σ, nm] 250 250
Backside alignment [3σ, nm] 1000 1000
Exposure time 405 nm laser for 4″ wafer [min] 35 9
Exposure time 375 nm laser for 4″ wafer [min] 35 20
Max. write speed 405 nm laser [mm2/min] 285 1100
Max. write speed 375 nm laser [mm2/min] 285 500
Maximum exposure area 150 x 150 mm2 | Optional: 200 x 200 mm2


Video MLA

 

Video MLA 150



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