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MLA300 - Maskless Aligner for Volume Production

MLA300 - Maskless Aligner for Volume Production from Heidelberg Instruments Mikrotechnik GmbH

The MLA300 is the industrial production version of the Maskless Aligner, which already has become a standard in Research & Development applications, rapid prototyping, and low-to mid-volume production. The MLA300 achieves high resolutions of 2 µm lines and spaces at the high throughput and high availability expected in production. It features full automation with wafer robot and load ports, and software specifically designed for the production environment to offer a simplified automated workflow.

At the same time, it features all the advantages associated with maskless lithography: Overheads and expense associated with the procurement of masks, and their handling, cleaning, and storage are eliminated.

The Maskless Aligner technology uses a Spatial Light Modulator which essentially acts like a dynamic mask. It offers the flexibility to structure the most challenging substrates, allowing per-die pattern corrections (e.g. to react to distortions or process variations), and employs a real-time autofocus to follow substrate warp or corrugations. The fully integrated exposure modules are available for a selection of wavelengths (375 nm or 405 nm) and with different resolution options. Multiple exposure modules can be mounted in the MLA300 for even higher throughput.

The MLA300 excels in application areas such as the production of sensors, sensor ICs, MEMS devices, discrete electronic components, analog and digital ICs, ASICs, Power electronics, OLED displays, as well as for advanced packaging applications.

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Parameters MLA300

Writing performance
Minimum feature size [µm] 1,5
Minimum lines and spaces [µm] 2,0
CD uniformity [3σ, nm] 200 
Edge roughness [3σ, nm] 80
Stitching [3σ, nmσ]
120
2nd layer alignment [3σ, nm] 500
Backside alignment [3σσ, nm]
1000
Exposure time per module ( 100 x 100 mm2 at 50 mJ/cm2 and 405 nm laser wavelength) 2,6 min
Maximum write speed with one module at 405 nm laser wavelength 5000 mm2/min
System features
Light source Laser wavelength: 375 nm and 405 nm High power diode laser with long life-time
Maximum substrate size 300 х 300 mm2 
Maximum exposure area 300 х 300 mm2 
Substrate thickness 0,1 - 10 mm
Modular environmental chamber Temperature stability ± 0.1°C
Real-time autofocus Optical and/or pneumatic autofocus
Autofocus dynamic range Up to 150 µm
Alignment Advanced alignment; backside alignment optional
Automation Automatic wafer handling and pre-alignment
System dimensions (excluding loader)
Width Depth Height Weight
Main tool 1200 mm 2310 mm 1980 mm 2600 kg
Требования к подключению
Electrical 400 VAC, 50/60 Hz, 16 A
Compressed Air 6 - 10 bar, ± 0.5 bar

 Video MLA



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