2-inch DLI-MOCVD / ALD / RTP system for R&D.
Deposition and annealing inside the same chamber.
Applications
- Metal and alloys, oxides, nitrides, III-V, II-VI,...
- Semiconductor: SiO2, HfO2, Ta2O5, Cu, TiN, TaN, ...
- Nitrides and alloys: GaN, AlN, GaAs, GaAsN...
- High k Dielectrics: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
- Ferroelectrics: SBT, SBTN, PLZT, PZT,…
- Superconductors: YBCO, Bi-2223, Bi-2212, Tl-1223, …
- Piezoelectrics: (Pb, Sr)(Zr,Ti)O3, Modified Lead Titanate
- Metals: Pt, Cu,...
- Colossal Magneto Resistance
- Thermal coatings, Buffer layers, Mechanical coatings, Optics
- Etc...
Specifications
- The Annealsys MC050 is a 2-inch MOCVD / ALD / RTP system especially developed to meet the requirements of research and development units.
- The MC050 allows doing deposition of oxides, nitrides, metals, III-V and II-VI on various types of substrates by MOCVD and ALD using organometallic precursors..
- The MC050 system is provided with direct liquid injection (DLI) vaporizers allowing the widest range of utilization of precursors for development of new materials.
- The infrared lamp heating system provides in-situ annealing process capability inside the deposition chamber.
Performance & characteristics
- Temperature range: RT to 1100°C
- Gas mixing capability with mass flow controllers
- Up to 6 vaporizers
- Vacuum range: Atmosphere to 10-3 Torr
- Glove box loading option
- High vacuum capability in option
